CONFERENCE PROGRAMME

Monday, September 30

EFUG2013 Workshop (European FIB Users Group)
09:30 to 12:30Room 2.1-2.4
moderatorR. Langford - University of Cambridge (United Kingdom)
EFUG2013 Workshop (European FIB Users Group)
14:00 to 18:00Room 2.1-2.4
moderatorR. Langford - University of Cambridge (United Kingdom)
 

Tuesday, October 1

Tutorial
 Auditorium
08:50 Failure analysis techniques for a 3D world
C. L. Henderson
(Semitracks, Inc. 5608 Brockton Ct. NE, Albuquerque, NM 87111-6625, USA)
10:30Coffee Break
Tutorial
 Auditorium
10:50 Techniques and Approaches for Morphological Investigation on Dielectric Breakdown in High-k/Metal Stacks
 K.L. Pey
(Singapore University of Technology and Design, Singapore)
Tutorial
 Room 2.1-2.4
10:50 Embedded packaging and assembly; Reliability and supply chain implications
C. E. Bauer, H. J. Neuhaus
(TechLead Corporation, Colorado Springs, CO, USA)
12:30Lunch
14:00Official opening of ESREF 2013
Session KKey note paper
 Auditorium
chairpersonN. Labat - IMS, University of Bordeaux (France)
14:20 Invited paper
Sub-28nm FD-SOI Technologies : an Optimum Tradeoff on Energy Efficiency and Resilience.
 Philippe Flatresse
(ST Microelectronics – France)
Session IRPSBest Paper IRPS
 Auditorium
15:00 Invited paper
Intrinsic Transistor Reliability Improvements from 22nm Tri-Gate Technology
 S. Ramey,   A. Ashutosh,   C. Auth,   J. Clifford,   M. Hattendorf,   J. Hicks,   R. James,   A. Rahman,   V. Sharma,   A. St Amour,   C. Wiegand
(Intel - USA)
Session IPFABest Paper IPFA
 Auditorium
15:20 Invited paper
Understanding Correlated Drain and Gate Current Fluctuations
 W. Goesa,   M. Toledano-Luqueb,   O. Baumgartnera,   M. Binaa,   F. Schanovskya,   B. Kaczerb,   T. Grassera
(aInstitute for Microelectronics, TU Wien, Vienna - Austria , b IMEC, Leuven - Belgium)
15:40Coffee Break
Session B3aEOS/ESD/EMC Robustness, Modeling and Characterization
 Auditorium
chairpersonsM. Bafleur - LAAS-CNRS (France)
Ph. Galy - STMicroelectronics (France)
16:00 Invited paper
Long-term Electro-Magnetic Robustness of Integrated Circuits: EMRIC research project
S. Ben Dhia, A. Boyer
(LAAS-CNRS, Université de Toulouse, Toulouse, France, UPS, INSA, INP, ISAE, Toulouse, France, UT1, UTM, LAAS, Toulouse, France)
16:40 B3a-1 #34LDO regulator DC characteristic and susceptibility prediction after electrical stress ageing
J. Wua, A. Boyerb, J. Lia, S. Bendhiab, B. Vrignonc
(aCollege of Electronic Science and Engineering, National University of Defense Technology, 410073 Changsha, Hunan, China, bLAAS-CNRS, Université de Toulouse; UPS, INSA, INP, ISAE; UT1, UTM, LAAS, Toulouse, France, cFreescale Semiconductors, Toulouse 31023, France)
17:00 B3a-2 #171On-chip measurement to analyze failure mechanisms of ICs under system level ESD stress
F. Caigneťa,b, N. Nolhiera,b, M. Bafleurb, A. Wangb, N. Mauranb
(aUniversity of Toulouse – Paul Sabatier, Toulouse 31000, France, bCNRS-LAAS, 7 Avenue du Colonel Roche, Toulouse F-31077, France)
17:20 B3a-3 #119Symmetrical ESD protection for advanced CMOS technology dedicated to 100GHz RF application
P. Galya, T. Lima, J. Bourgeata, J. Jimeneza, B. Heitza, D. Marin-Cudraza, P. Benechb, J.M. Fournierb
(aSTMicroelectronics, 850 rue Jean Monnet, 38926 Crolles, France, bIMEP-LAHC, 3 Parvis Louis Néel, BP 257, 38016 Grenoble Cedex, France)
17:40 B3a-4 #76Experimental investigation of Zener diode reliability under pulsed Electrical Overstress (EOS)
F. Zhu, F. Fouquet, B. Ravelo, A. Alaeddine, M. Kadi
(IRSEEM, EA 4353 at ESIGELEC, Technopole du Madrillet, Av. Galilée, BP 10024, 76801 Saint Etienne du Rouvray Cedex, France)
Workshop "Accelerated mechanical testing for reliability assessment in microelectronic applications"
16:40 to 20:00Room 2.1-2.4
 

Wednesday, October 2

Session FaLifetime testing & monitoring of Power devices
 Auditorium
chairpersonsE. Wolfgang - ECPE e.V.(Germany)
M. Ciappa - ETH Zurich (Switzerland)
08:30 Invited paper
Trends in automotive power semiconductor packaging
P. Dietrich
(Fuji Electric Europe GmbH, Application Engineering, Goethering 58, Offenbach/Main, Hessen 63067, Germany)
09:10 Fa-1 #36Impact of load pulse duration on power cycling lifetime of Al wire bonds
U. Scheuermann, R. Schmidt
(SEMIKRON Elektronik GmbH & Co. KG, Sigmundstr. 200, 90431 Nuremberg, Germany)
09:30 Fa-2 #146Real time degradation monitoring system for high power IGBT module under power cycling test
A. Watanabea, M. Tsukudaa,b, I. Omuraa
(aDepartment of Electrical Engineering/Electronics, Kyushu Institute of Technology, 1-1 Sensui, Tobata, Kitakyushu 804-8550, Japan, bThe International Centre for the Study of East Asian Development, 1-8 Hibikino, Wakamatsu-ku, Kitakyushu 808-0138, Japan)
09:50 Fa-3 #47Power MOSFET active power cycling for medical system reliability assessment
A. Sowa,b, S. Somayaa, Y. Oustenb, J.-M. Vinassab, F. Patoureauxa
(aGE Healthcare, 283 rue de la Minière, 78533 Buc, France, bIMS Laboratory, University of Bordeaux, 351 Cours de la Libération, 33400 Talence Cedex, France)
10:10 Fa-4 #147Reliability of power MOSFET-based smart switches under normal and extreme conditions for 24V battery system applications
G. Rostainga, M. Berkania, D. Mechouchea, D. Labroussea, S. Lefebvrea, Z. Khatirb, P. Dupuyc
(aSATIE, CNAM, CNRS, ENS Cachan, 61 Av. du Président Wilson, 94234 Cachan, France, bLTN IFSTTAR, 25 allée des Marronniers, Satory, 78000 Versailles, France, cFreescale Semiconductor, Avenue du Général Eisenhower, 31023 Toulouse, France)
Session CaFailure analysis: Optical techniques
 Room 2.1-2.4
chairpersonsR. Heiderhoff - University of Wuppertal (Germany)
Ph. Perdu - CNES (France)
09:10 Ca-1 #15Observation of impurity diffusion defect in IGBT using a laser terahertz emission microscope technique
Y. Gotoa, T. Matsumotob, K. Nikawac
(aToyota Motor Corporation, 543, Kirigahora, Nishihirose-cho, Toyota, Aichi 470-0309, Japan, bHamamatsu Photonics K.K., 812, Joko-cho, Higashi-ku, Hamamatsu, Shizuoka 431-3196, Japan, cKanazawa Institute of Technology, Atagotoyo Bldg. 12F, 1-3-4, Atago, Minato-ku, Tokyo 105-002, Japan)
09:30 Ca-2 #53Failure analysis of GaAs microwave devices with plastic encapsulation by electro-optical techniques
W. Ben Naceura, N. Malberta, N. Labata, H. Frémonta, D. Carisettib, J.-C. Clémentb, J.-L. Muraroc, B. Bonnetc
(aIMS Laboratory, University Bordeaux 1, 351 Cours de la Libération, 33405 Talence Cedex, France, bThales Research and Technology, 1 Avenue Augustin Fresnel, 91767 Palaiseau, France, cThales Alenia Space, 26 Avenue J.F. Champollion, BP 33787, 31037 Toulouse Cedex 1, France)
09:50 Ca-3 #156Unstructured tetrahedric meshes for the description of complex three-dimensional sample geometries in Monte Carlo simulation of scanning electron microscopy images for metrology applications
E. Ilgünsatiroglu, A. Y. Illarionov, M. Ciappa
(ETH Zurich, Integrated Systems Laboratory, CH-8092 Zurich, Switzerland )
10:10 Ca-4 #80Frequency mapping in dynamic light emission with wavelet transform
S. Chefa, S. Jacquira, K. Sanchezb, P. Perdub, S. Binczaka
(aLE2I, UMR CNRS 6306, University of Burgundy, 9 Avenue Alain Savary, 21000 Dijon, France, bCentre National d’Etudes Spatiales (CNES), 18 Avenue Edouard Belin, 31401 Toulouse, France)
Session B3bRadiation Effects Modeling
 Room 3.3-3.4
chairpersonsPh. Galy - STMicroelectronics (France)
G. Boselli - Texas instruments (USA)
09:10 B3b-1 #1272MeV electron irradiation effects on the electrical characteristics of MOS capacitors with ALD Al2O3 dielectrics of different thickness
J.M. Rafía, M.B. Gonzáleza, K. Takakurab, I. Tsunodab, M. Yoneokab, O. Beldarraina, M. Zabalaa, F. Campabadala
(aInstitut de Microelectrònica de Barcelona, IMB-CNM (CSIC), Campus UAB, 08193 Bellaterra, Spain, bKumamoto National College of Technology, 2659-2 Suya Koshi, Kumamoto 861-1102, Japan)
09:30 B3b-2 #35Electrical modeling of the photoelectric effect induced by a pulsed laser applied to an SRAM cell
A. Sarafianosa,b, C. Roscianb, J.-M. Dutertreb, M. Lisarta, A. Triab
(aSTMicroelectronics, Avenue Célestin Coq, 13390 Rousset, France, bENSM.SE, Centre Microélectronique de Provence – Georges Charpak, 880 Route de Mimet, 13541 Gardanne, France)
09:50 B3b-3 #19Modeling dose effects in electronics devices: Dose and temperature dependence of power MOSFET
A. Micheza, J. Bocha, S. Dhombresa,b, F. Saignéa, A.D. Touboula, J.-R. Vailléa,c, L. Dusseaua, E. Lorfèvred, R. Ecoffetd
(aUniversité Montpellier 2, IES UMR 5214 CNRS/UM2, F-34095 Montpellier Cedex 5, France, bSYSTHEIA, Montpellier, France, cUniversité de Nîmes, Rue du Docteur Salan, 30021 Nîmes Cedex 01, France, dCentre National d’Etudes Spatiales, F-31401 Toulouse Cedex 9, France)
10:10 B3b-4 #117SEL-UP: A CAD tool for the sensitivity analysis of radiation-induced Single Event Latch-Up
L. Sterpone
(Dipartimento di Automatica e Informatica, Politecnico di Torino, Torino, Italy)
10:30Coffee Break
Session CbFailure analysis: Sample preparation
 Auditorium
chairpersonsG. Haller - STMicroelectronics (France)
O. Crepel - EADS (France)
10:50 Invited paper
Effectiveness of the scanning nonlinear dielectric microscopy on the failure analysis of semiconductor devices
 Koichiro Honda
(Tohoku University, Sendai - Japan)
11:30 Cb-1 #111Detectability of automotive power MOSFET on-resistance failure at high current induced by Wafer Fab process excursion
Y. Weber, J. Goxe, M. Castignolles
(Freescale Semiconducteurs France SAS, Toulouse Product Analysis Lab, 134 avenue du Général Eisenhower, B.P. 72329, 31023 Toulouse Cedex, France)
11:50 Cb-2 #175XEBIC at the Dual Beam
M. Vanzia, S. Poddab, E. Musub, R. Caoc
(aUniversity of Cagliari – DIEE,Piazza d’Armi, 09123 Cagliari, Italy, bSardegna Ricerche – Laboratory of Telemicroscopy – loc, Piscinamanna, 09010 Cagliari, Italy, cHuawei Technologies, CO., LTD, Shenzhen, China)
12:10 Cb-3 #32Avoiding misleading artefacts in metallurgical preparation of die attach solder joints in high power modules
F. Dugala,b, M. Ciappab
(aABB Switzerland Ltd., Semiconductor, Fabrikstrasse 3, CH-5600 Lenzburg, Switzerland, bETH Zurich, Integrated System Laboratory, ETH-Zentrum, CH-F092 Zurich, Switzerland)
Session B3cRadiation Effects Characterization & Mitigation
 Room 2.1-2.4
chairpersonsG. Boselli - Texas instruments (USA)
M. Bafleur - LAAS-CNRS (France)
11:10 B3c-1 #99Characterization and modeling of laser-induced single-event burn-out in SiC power diodes
N. Mbayea, V. Pougetb,2, F. Darracqa,1, D. Lewisa,1
(aIMS, University of Bordeaux, CNRS UMR5218, 351 cours de la Liberation, 33405 Talence, France, bIES, University of Montpellier 2, Place Eugnène Bataillon, 34095 Montpellier, France)
11:30 B3c-2 #68Sensitivity tuning of a bulk built-in current sensor for optimal transient-fault detection
J.M. Dutertrea, R. Possamai Bastosb, O. Potina, M.L. Flottesc, B. Rouzeyrec, G. Di Natalec
(aEcole Nationale Supérieure des Mines de Saint-Etienne, Centre Microélectronique de Provence Georges Charpak, 880 Avenue de Mimet, 13541 Gardanne, France, bTIMA (CNRS UMR N5159), 46, avenue Félix Viallet, 38031 Grenoble Cedex, France, cLIRMM (CNRS UMR N5506), 161, rue Ada, 34095, Montpellier Cedex 5, France)
11:50 B3c-3 #182Impact of negative bias temperature instability on the single-event upset threshold of a 65nm SRAM cell
I. El Moukhtaria, V. Pougetb, C. Laruec, F. Darracqa, D. Lewisa, P. Perdud
(aIMS, University Bordeaux 1, 33405 Talence, France, bIES, University Montpellier 2, 34095 Montpellier, France, cPULSCAN, 6 Avenue de la Grande Lande, 33170 Gradignan, France, dCNES 23, Avenue Edouard Belin, 31400 Toulouse, France)
12:30Lunch
Session GReliability of Photovoltaic and Organic devices
 Auditorium
chairpersonA. Cester - University of Padova (Italy)
14:00 Invited paper
Thin film silicon photovoltaics from glass substrates to flexible organic/plastic substrates
 Cosimo Gerardi
(ST Microelectronics also with 3SUN s.r.l – Italy)
14:40 G-1 #166Effects of constant voltage stress on p- and n-type organic thin film transistors with poly(methyl methacrylate) gate dielectric
N. Wrachiena, A. Cestera, D. Baria, R. Capellib,1, R. D’alpaosc,1, M. Muccinib,c,1, A. Stefanic,1, G. Turattic,1, G. Meneghessoa
(aDepartment of Information Engineering, University of Padova, Via Gradenigo 6/B, 35131 Padova, Italy, bCNR-ISMN Bologna Via Piero Gobetti, 101, 40129 Bologna, Italy, cE.T.C. S.r.l. Via Piero Gobetti, 101, 40129 Bologna, Italy)
15:00 G-2 #170Comparison between positive and negative constant current stress on dye-sensitized solar cells
D. Baria, N. Wrachiena, R. Tagliaferrob, T.M. Brownb, A. Realeb, A. Di Carlob, G. Meneghessoa, A. Cestera
(aDEI, Department of Information Engineering, University of Padova, Padova, Italy, bCHOSE, Department of Electronic Engineering, University of Rome “Tor Vergata”, Roma, Italy)
15:20 G-3 #160Thermal and electrical investigation of the reverse bias degradation of silicon solar cells
A. Compagnina, M. Meneghinia, M. Barbatoa, V. Gilibertoa, A. Cestera, M. Vanzic, G. Murac, E. Zanonia,b, G. Meneghessoa,b
(aDepartment of Information Engineering, University of Padua, Via Gradenigo 6/B, 35131 Padua, Italy, bIUNET, via Toffano, 2, 40125 Bologna, Italy, cDIEE University of Cagliari, Piazza D’armi, 09123 Cagliari, Italy)
Session FbTest and modeling of Si Power devices
 Room 2.1-2.4
chairpersonsE. Wolfgang - ECPE e.V.(Germany)
M. Ciappa - ETH Zurich (Switzerland)
14:40 Fb-1 #174Scattering parameter approach applied to the stability analysis of power IGBTs in short circuit
C. Abbatea, G. Busattoa, F. Iannuzzoa, C. Ronsisvalleb, A. Sanseverinoa, F. Velardia
(aDepartment of Electric and Information Engineering (DIEI), University of Cassino and Southern Lazio, Via G. Di Biasio, 43, 03043 Cassino, FR, Italy, bFairchild Semiconductor, GmbH 85609 Aschheim/Munich, Germany)
15:00 Fb-2 #121Analysis of the UIS behavior of power devices by means of SPICE-based electrothermal simulations
V. D’alessandroa, A. Magnania, M. Riccioa, Y. Iwahashib, G. Breglioa, N. Rinaldia, A. Iracea
(aDepartment of Electrical Engineering and Information Technology, University Federico II, via Claudio 21, 80125 Naples, Italy, bToyota Motor Co. 543, Kirigahora, Nishihirose-cho, Toyota, Aichi 470-0309, Japan)
15:20 Fb-3 #100Electrical characterization under mechanical stress at various temperatures of PiN power diodes in a health monitoring approach
F. Baccar, S. Azzopardi, L. Theolier, K. El Boubkari, J.-Y. Deletage, E. Woirgard
(University of Bordeaux, IMS, UMR 5218, F-33400 Talence, France)
15:40 Fb-4 #110Distributed electro-thermal model of IGBT chip – Application to top-metal ageing effects in short circuit conditions
J. Moussodjia, T. Kociniewskia,b, Z. Khatira
(aLaboratory of New Technologies, IFSTTAR, 25 allée des Marronniers, 78000 Versailles, France, bGroupe d’Etude de la Matière Condensée (CNRS and University of Versailles St Quentin), 45 avenue des Etats-Unis, 78035 Versailles cedex, France)
Session CcFailure analysis: Magnetic and near field techniques
 Room 3.3-3.4
chairpersonsR. Heiderhoff - University of Wuppertal (Germany)
Ph. Perdu - CNES (France)
14:40 Cc-1 #116IGBT chip current imaging system by scanning local magnetic field
H. Shiratsuchi, K. Matsushita, I. Omura
(Kyushu Institute of Technology, 1-1 Sensui-cho, Tobata-ku, Kitakyushu 804-8550, Japan)
15:00 Cc-2 #164Dynamic Near-Field Scanning Thermal Microscopy on thin films
R. Heiderhoff, H. Li, T. Riedl
(University of Wuppertal, Institute of Electronic Devices, Rainer-Gruenter-Str. 21, 42119 Wuppertal, Germany)
15:20 Cc-3 #81Opens localization on silicon level in a Chip Scale Package using space domain reflectometry
J. Gaudestada, V. Talanova, M. Marchettib
(aNeocera, LLC, 10000 Virginia Manor Road, Beltsville, MD 20705, USA, bST Micro Electronics, ZI de Rousset, 13106 Rousset Cedex, France)
16:00Coffee Break
Poster Session
16:20See below for detailled programme
EUFANET 2013 meeting (European Failure Analysis NETwork)
18:00 to 20:00Auditorium
moderatorM. Savoia - STMicroelectronics (Italy)
Workshop "Power devices"
18:00 to 20:00Room 2.1-2.4
moderatorE. Wolfgang - Siemens and ECPE (Germany)
20:00Reception and Wine casino
 

Thursday, October 3

Session D1aFailures Mechanisms in Microwave and Wide Band-Gap Devices
 Auditorium
chairpersonsN. Malbert - IMS, University of Bordeaux (France)
G. Meneghesso - University of Padova (Italy)
08:30 Invited paper
Qualification of 50V GaN on SiC technology for RF power amplifiers
P.J. V. D. Wela, T. Roedleb, B. Lambertc, H. Blanckd, M. Dammanne
(aRegional Quality Center Europe, NXP Semiconductors, Nijmegen, The Netherlands, bFront-End Technology, NXP Semiconductors, Nijmegen, The Netherlands, cUnited Monolithic Semiconductors, Villebon, France, dUnited Monolithic Semiconductors, Ulm, Germany, eFraunhofer Institute for Applied Solid State Physics (IAF), Freiburg, Germany)
09:10 D1a-1 #165Statistics and localisation of vertical breakdown in AlGaN/GaN HEMTs on SiC and Si substrates for power applications
C. Fleurya, R. Zhytnytskab, S. Bychikhina, M. Cappriottia, O. Hiltb, D. Visallic, G. Meneghessod, E. Zanonid, J. Würflb, J. Derluync, G. Strassera, D. Poganya
(aVienna University of Technology, Floragasse 7, A-1040 Vienna, Austria, bFerdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik (FBH), Gustav-Kirchhof-Strasse 4, 12489 Berlin, Germany, cEpiGaN, Kempischesteenweg 293, B-3500 Hasselt, Belgium, dUniversity of Padova, Via Gradenigo 6/B, 35131 Padova, Italy)
09:30 D1a-2 #176Analysis of Schottky gate degradation evolution in AlGaN/GaN HEMTs during HTRB stress
L. Brunela,b, B. Lamberta, P. Mezengea, J. Bataillea, D. Floriota, J. Grünenpüttd, H. Blanckd, D. Carisettic, Y. Gourdelc, N. Malbertb, A. Curutchetb, N. Labatb
(aUnited Monolithic Semiconductor, 10 Av du Québec, 91140 Villebon-sur-Yvette, France, bIMS, CNRS UMR 5218 – Université Bordeaux 1 - 351, Cours de la Libération, F-33405 Talence, France, cThales R&T, 1 Av Auguste Fresnel, 91767 Palaiseau Cedex, France, dUnited Monolithic Semiconductor, Wihlelm-Runge-Strasse 11, 89081 Ulm, Germany)
09:50 D1a-3 #179Reverse-bias stress of high electron mobility transistors: Correlation between leakage current, current collapse and trap characteristics
I. Rossetto, M. Meneghini, G. Meneghesso, E. Zanoni
(University of Padova, Department of Information Engineering, Via Gradenigo 6/B, 35131 Padova, Italy)
10:10 D1a-4 #108Impact of field-plate geometry on the reliability of GaN-on-SiC HEMTs
A. Chinia, F. Socia, F. Fantinia, A. Nannib, A. Pantellinib, C. Lanzierib, G. Meneghessoc, E. Zanonic
(aDepartment of Engineering “Enzo Ferrari”, University of Modena and Reggio Emilia, 41125 Modena, Italy, bSELEX Electronic Systems S.p.A., 00131 Roma, Italy, cDepartment of Information Engineering, University of Padova, 35131 Padova, Italy)
Session B1Failure Mechanism in Si & Nanoelectronics
 Room 2.1-2.4
chairpersonA. Bravaix - ISEN-IM2PN (France)
09:10 B1-1 #46Breakdown mechanisms in MgO based magnetic tunnel junctions and correlation with low frequency noise
S. Amara-Dababia, R.C. Sousaa, H. Béaa, C. Baraduca, K. Mackayb, B. Dienya
(aSpintec, UMR 8191, CEA-INAC/CNRS/UJF-Grenoble 1/Grenoble-INP, 17 rue des martyrs, 38054 Grenoble Cedex 9, France, bCrocus Technology, 4 place Robert Schuman, 38025 Grenoble Cedex, France)
09:30 B1-2 #145Influence of the interface trap location on the performance and variability of ultra-scaled MOSFETs
V. Velayudhana, F. Gamizb, J. Martin-Martineza, R. Rodrigueza, M. Nafriaa, X. Aymericha
(aDept. Enginyeria Electrònica, Universitat Autonoma de Barcelona (UAB), Bellaterra, 08193 Barcelona, Spain, bDept. Electrónica y Tecnología de Computadores, Universidad de Granada, 18071 Granada, Spain)
09:50 B1-3 #131Resistive switching like-behavior in MOSFETs with ultra-thin HfSiON dielectric gate stack: pMOS and nMOS comparison and reliability implications
A. Crespo-Yepes, J. Martín-Martínez, R. Rodríguez, M. Nafría, X. Aymerich
(Department of Electronic Engineering, Universitat Autònoma de Barcelona (UAB), 08193 Bellaterra, Barcelona, Spain)
10:10 B1-4 #151On-chip circuit to monitor long-term NBTI and PBTI degradation
K. A. Jenkins, P.-F. Lu
(IBM T.J. Watson Research Center, Route 134, Yorktown Heights, NY 10598, USA)
Session AaReliability techniques at function level
 Room 3.3-3.4
chairpersonsN. Stojadinovic - University of Nis (Serbia)
Y. Danto - IMS, University of Bordeaux (France)
09:10 Aa-1 #62Impact of NBTI/PBTIon SRAMs within microprocessor systems: Modeling, simulation, and analysis
C.-C. Chen, F. Ahmed, L. Milor
(School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA 30332, USA)
09:30 Aa-2 #71A defect-tolerant area-efficient multiplexer for basic blocks in SRAM-based FPGAs
A. Ben Dhiaa, S.N. Pagliarinia, L.A. De B. Navinera, H. Mehrezb, P. Matherata
(aInstitut Télécom/Télécom ParisTech, CNRS-LTCI UMR 5141, Paris, France, bLIP6, Université Pierre et Marie Curie, Paris, France)
09:50 Aa-3 #114Benefits of field failure distribution modeling to the failure analysis
C. Bergès, J. Goxe
(Product Analysis Laboratory, Freescale Semiconductor SAS, 134 Av General Eisenhower, BP 72329, 31023 Toulouse Cedex 1, France)
10:10 Aa-4 #184Approach of a physically based lifetime model for solder layers in power modules
P. Steinhorst, T. Poller, J. Lutz
(Chemnitz University of Technology, Chemnitz, Germany)
10:30Coffee Break
Session D2aFailures mechanisms in Photonic Devices
 Auditorium
chairpersonsL. Bechou - IMS, University of Bordeaux (France)
M. Vanzi - University of Cagliari (Italy)
10:50 Invited paper
High optical strength GaAs-based laser structures
M. A. Bettiati
(3S PHOTONICS, Route de Villejust, 91625 Nozay, France)
11:30 D2a-1 #65Defect signatures in degraded high power laser diodes
V. Hortelanoa, J. Anayaa, J. Soutoa, J. Jiméneza, J. Perinetb, F. Laruelleb
(aGdS Optronlab, Ed. i+d, Universidad de Valladolid, Paseo de Belén 1, 47011 Valladolid, Spain, b3S photonics, Route de Villejust, F-91625 Nozay, France)
11:50 D2a-2 #186Saint-Venant’s principle and the minimum length of a dual-coated optical fiber specimen in reliability (proof) testing
E. Suhira, L. Bechoub
(aDepartment of Electrical Engineering, University of California, 1156 High St., Santa Cruz, CA 95064, USA, bLaboratoire IMS, Universite Bordeaux 1-Cours de la Libération, 33405 Talence Cedex, France)
12:10 D2a-3 #172ESD characterization of multi-chip RGB LEDs
S. Vaccaria, M. Meneghinia, A. Griffonib, D. Barbisana, M. Barbatoa, S. Carraroa, M. La Grassaa, G. Meneghessoa, E. Zanonia
(aUniversity of Padova, Department of Information Engineering, via Gradenigo 6/B, 35131 Padova, Italy, bOSRAM SpA, via Castagnole 65, 31100 Treviso, Italy)
Session B1B2Failure Mechanism in Si & Nanoelectronics
 Room 2.1-2.4
chairpersonsH. Jaouen - STMicroelectronics (France)
A. Scorzoni - Universit di Perugia (Italy)
11:10 B1B2-1 #83Direct observation of the generation of breakdown spots in MIM structures under constant voltage stress
X. Sauraa, D. Moixa, J. Suñéa, P.K. Hurleyb, E. Mirandaa
(aDepartament d’Enginyeria Electrònica, Universitat Autònoma de Barcelona, Cerdanyola del Vallès, 08193 Barcelona, Spain, bTyndall National Institute, University College Cork, Cork, Ireland)
11:30 B1B2-2 #113Bidirectional electromigration failure
M.K. Lima,b, V.A. Chouliarasc, C.L. Ganb, V.M. Dwyerc
(aGlobalfoundries, Singapore Pte Ltd., 60 Woodlands Ind Park, 738406 Singapore, Singapore, bSchool of Materials Science and Engineering, Nanyang Technological University, 639798 Singapore, Singapore, cSchool of Electronic, Electrical and Systems Engineering, Loughborough University, UK)
Session AbReliability techniques at component level
 Room 3.3-3.4
chairpersonsN. Stojadinovic - University of Nis (Serbia)
Y. Danto - IMS, University of Bordeaux (France)
11:10 Ab-1 #21Impact of the forming conditions and electrode metals on read disturb in HfO2-based RRAM
P. Lorenzi, R. Rao, T. Prifti, F. Irrera
(Department of Information Engineering, Electronics and Communication, “Sapienza” University of Rome I, Via Eudossiana 18, 00184 Rome, Italy)
11:30 Ab-2 #84A novel test structure for OxRRAM process variability evaluation
H. Aziza, M. Bocquet, J.-M. Portal, M. Moreau, C. Muller
(IM2NP-UMR CNRS 7334, Aix-Marseille Université, Marseille, France)
11:50 Ab-3 #152A nonlinear degradation path dependent end-of-life estimation framework from noisy observations
N. Cucu Laurenciu, S.D. Cotofana
(Computer Engineering Laboratory, Delft University of Technology, Delft 2628CD, The Netherlands)
12:30Lunch
Session E1aDegradation mechanisms of semiconductor / substrate joints
 Auditorium
chairpersonsK. Weide-ZAAGE - University of Hannover (Germany)
W. Maia - THALES R&T
14:00 Invited paper
Application of advanced reliability and failure analysis methods for eWLB Fan-Out WLP Technology
 Pedro Rio,   Rodrigo Almeida,   Rui Gomes,   Vitor Chatinho
(Nanium SA – Portugal)
14:40 E1a-1 #43Thermal characterizations of Cu nanoparticle joints for power semiconductor devices
T. Ishizakia, T. Satoha, A. Kunob, A. Taneb, M. Yanaseb, F. Osawab, Y. Yamadab
(aToyota Central R&D Labs., Inc., 41-1, Yokomichi, Nagakute, Aichi 480-1192, Japan, bDepartment of Electrical and Electronic Engineering, Daido University, Nagoya, Aichi 457-8530, Japan)
15:00 E1a-2 #75Surface roughness effect on copper–alumina adhesion
J. D. Lima,b,c, Y. S. Y. Susanb, R. M. Daniela, K. C. Leongc, C. C. Wongb
(aInstitute of Microelectronics, A*STAR (Agency for Science, Technology and Research), Singapore, bSchool of Materials Science and Engineering, Nanyang Technological University, Singapore, cGLOBALFOUNDRIES Singapore Pte. Ltd, 738406, Singapore)
15:20 E1a-3 #27Failure causes generating aluminium protrusion/extrusion
P. Jacoba,b, G. Nicolettia
(aDept. 405 Electronics/Reliability/Metrology, Empa – Swiss Federal Laboratories for Materials Testing and Research, Ueberlandstrasse 129, CH 8600 Duebendorf, Switzerland, bDept. QA, EM Microelectronic Marin, Rue des Sors 2-3, CH 2074 Marin-Epagnier, Switzerland)
15:40 E1a-4 #144Experimental and analytical study of geometry effects on the fatigue life of Al bond wire interconnects
B. Czernya, I. Paulb, G. Khatibia, M. Thobenc
(aFaculty of Physics, University of Vienna, Boltzmanngasse 5, A-1090 Vienna, Austria, bInfineon Technologies, Am Campeon1-12, D-85579 Neubiberg, Germany, cInfineon Technologies, Max-Planck-Strasse 5, D-59581 Warstein, Germany)
Session FcTest and modeling of SiC devices
 Room 2.1-2.4
chairpersonsE. Wolfgang - ECPE e.V.(Germany)
M. Ciappa - ETH Zurich (Switzerland)
14:40 Fc-1 #123A new two-dimensional TCAD model for threshold instability in silicon carbide MOSFETs
T. Kikuchia, M. Ciappab
(aToshiba Corporation, Corporate Manufacturing Engineering Center, Yokohama 235-0017, Japan, bETH Zurich, Integrated Systems Laboratory, Zurich, Switzerland)
15:00 Fc-2 #155Robustness of 1.2kV SiC MOSFET devices
D. Othmana,b,c, S. Lefebvreb, M. Berkanib, Z. Khatirc, A. Ibrahimc, A. Bouzourenea
(aTHALES Avionics Electrical Systems, 41, Boulevard de la République, 78400 Chatou, France, bSATIE, CNAM, CNRS, ENS Cachan, 61 Av. du Président Wilson, 94234 Cachan, France, cLTN IFSTTAR, 25 allée des Marronniers, Satory 78000 Versailles, France)
15:20 Fc-3 #120Experimental analysis of electro-thermal instability in SiC Power MOSFETs
M. Riccioa, A. Castellazzib, G. De Falcoa, A. Iracea
(aDepartment of Electrical Engineering and Information Technologies, University of Naples Federico II, Italy, bPower Electronics, Machines and Control Group, University of Nottingham, Nottingham NG7 2RD, UK)
Special ESREF "Case study" workshop
14:40 to 16:00Room 3.3-3.4
moderatorsO. Crepel - EADS (France)
Ph. Perdu - CNES (France)
16:00Coffee Break
Session E1bDegradation mechanisms of packages and solder interconnects
 Auditorium
chairpersonsK. Weide-ZAAGE - University of Hannover (Germany)
W. Maia - THALES R&T
16:20 E1b-1 #141Application of quantitative modal analysis for investigation of thermal degradation of microelectronic packages
P. Rafieea, G. Khatibia, N. Nelhiebelb, R. Pelzerb
(aFaculty of Physics, University of Vienna, 1090 Vienna, Austria, bInfienon Technologies Austria, Villach, Austria)
16:40 E1b-2 #77A novel soldering method to evaluate PCB pad cratering for pin-pull testing
M. Caia,b, D.J. Xiec, W.B. Chena, B.Y. Wub, D.G. Yanga, G.Q. Zhanga
(aGuangxi Key Laboratory of Manufacturing System and Advanced Manufacturing Technology, Guilin University of Electronic Technology, Guilin 541004, China, bFlextronics Manufacturing Company, Xin Qing Science and Technology Industrial Park, Zhuhai, China, cNVIDIA Corporation, 2701 San Tomas Expressway, Santa Clara, CA, USA)
17:00 E1b-3 #31Electro- and thermomigration-induced IMC formation in SnAg3.0Cu0.5 solder joints on nickel gold pads
L. Meinshausena,b, H. Frémonta, K. Weide-Zaageb, B. Planoa
(aLaboratoire IMS, Université Bordeaux I, 351 Cours de la Libération, 33405 Talence Cedex, France, bInformation Technology Laboratory LFI, Leibniz Universität Hannover, Schneiderberg 32, 30167 Hannover, Germany)
17:20 E1b-4 #118Electrical behavior of Au–Ge eutectic solder under aging for solder bump application in high temperature Electronics
F.L. Laua, R. I Madea, W.N. Putraa, J.Z. Lima, V.C. Nachiappanb, J.L. Awb, C.L. Gana
(aSchool of Materials Science and Engineering, Nanyang Technological University, Singapore 639798, Singapore, bInstitute of Microelectronics (IME), 11 Science Park Road, Singapore 117685, Singapore)
Session FdThermal management & packaging
 Room 2.1-2.4
chairpersonsE. Wolfgang - ECPE e.V.(Germany)
M. Ciappa - ETH Zurich (Switzerland)
16:20 Fd-1 #183Effective and reliable heat management for power devices exposed to cyclic short overload pulses
M. Nelhiebela, R. Illingb, T. Detzelb, S. Wöhlertb, B. Auerb, S. Lanzerstorferb, M. Rogallic, W. Roblc, S. Deckerd, J. Fuggera, M. Ladurnerb
(aKompetenzzentrum für Automobil und Industrieelektronik (KAI), Villach, Austria, bInfineon Technologies Austria AG, Villach, Austria, cInfineon Technologies AG, Regensburg, Germany, dInfineon Technologies AG, Munich, Germany)
16:40 Fd-2 #128Estimation of power MOSFET junction temperature during avalanche mode: Experimental tests and modelling
T. Azouia,b, P. Tounsia,b, J.M. Dorkela,b, J.M. Reynesc, J.L. Massola,b, E. Pomesa,b
(aCNRS, 7 avenue du Colonel Roche, F-31400 Toulouse, France, bUniv de Toulouse, INSA, LAAS, F-31400 Toulouse, France, cFreescale Semiconducteurs France SAS, 134 avenue du Gènèral Eisenhower, 31023 Toulouse, France)
17:00 Fd-3 #181Influence of the clamping pressure on the electrical, thermal and mechanical behaviour of press-pack IGBTs
T. Pollera, S. D’arcob, M. Hernesb, A. Rygg Ardalb, J. Lutza
(aChemnitz University of Technology, 09107 Chemnitz, Germany, bSINTEF Energy Research, Sem Sælands vei 11, 7491 Trondheim, Norway)
17:20 Fd-4 #102Thermal optimization of water heat sink for power converters with tight thermal constraints
P. Covaa,b, N. Delmontea,b, F. Giuliania, M. Citterioc, S. Latorrec, M. Lazzaronic,d, A. Lanzab
(aDipartimento Ingegneria dell’Informazione, University of Parma, v.le G.P. Usberti 181/A, 43124 Parma, Italy, bINFN Pavia, via Agostino Bassi, 6, 27100 Pavia, Italy, cINFN Milano, via Celoria, 16, 20133 Milano, Italy, dDipartimento di Fisica, Università degli Studi di Milano, via Celoria, 16, 20133 Milano, Italy)
17:40 Fd-5 #49Fatigue life evaluation of aluminum bonding wire in silicone gel under random vibration testing
K. Sasakia,b, N. Ohnob
(aHitachi Research Laboratory, Hitachi, Ltd., 832-2, Horiguchi, Hitachinaka 312-0034, Japan, bDepartment of Mechanical Science and Engineering, Nagoya University, Chikusa-ku, Nagoya 464-8603, Japan)
Special ESREF "Case study" workshop
16:20 to 17:40Room 3.3-3.4
moderatorsPh. Perdu - CNES (France)
O. Crepel - EADS (France)
 

Friday, October 4

Session E2aPassive devices reliability
 Auditorium
chairpersonsI. De Wolf - IMEC (Belgium)
G. Papaioannou - University of Athens (Greece)
08:30 Invited paper
MEMS packaging reliability assessment: Residual Gas Analysis of gaseous species trapped inside MEMS cavities
P.-L. Charvet, P. Nicolas, D. Bloch, B. Savornin
(Characterization and Reliability of Components Laboratory, CEA, LETI, MINATEC Campus, 17 rue des Martyrs, 38054 Grenoble Cedex 9, France)
09:10 E2a-1 #70Thermal cycling impacts on supercapacitor performances during calendar ageing
M. Ayadia, O. Briata, A. Eddahecha, R. Germanb, G. Coqueryc, J.M. Vinassaa
(aUniv. Bordeaux, IMS, UMR 5218 CNRS, F-33400 Talence, France, bUniversité de Lyon, Laboratoire AMPERE UMR CNRS 5005, Université Claude Bernard Lyon 1, France, cIFSTTAR, LTN, 25, allée des marronniers, F-78000 Versailles Satory, France)
09:30 E2a-2 #122Supercapacitors aging diagnosis using least square algorithm
A. Oukaoura, M. Pouliquenb, B. Tala-Ighila, H. Gualousa, E. Pigeonb, O. Gehanb, B. Boudarta
(aUniversité de Caen Basse Normandie, EA 4253, F-50130 Cherbourg-Octeville, France, bUniversité de Caen Basse Normandie, GREYC CNRS UMR 6072, ENSICAEN, 06 Bd du Maréchal Juin, 14050 Caen Cedex, France)
09:50 E2a-3 #64Impact of high frequency current ripple on supercapacitors ageing through floating ageing tests
R. Germana,b, O. Briatb, A. Saria, P. Veneta, M. Ayadib, Y. Zitounia, J.M. Vinassab
(aAMPERE UMR CNRS 5005, Universite de Lyon, Universite Lyon 1, F-69622 Villeurbanne Cedex, France, bUniv. Bordeaux, IMS, UMR 5218 CNRS, F-33400 Talence, France)
Session D1bFailures Mechanisms in Microwave and Wide Band-Gap Devices
 Room 2.1-2.4
chairpersonsN. Malbert - IMS, University of Bordeaux (France)
G. Meneghesso - University of Padova (Italy)
09:10 D1b-1 #168GaAs P-HEMT MMIC processes behavior under multiple heavy ion radiation stress conditions combined with DC and RF biasing
A. Bensoussana, R. Mareca, J.L. Muraroa, L. Portala, P. Calvela, C. Barillota, M.G. Perichaudb, L. Marchandb, G. Vignonc
(aThales Alenia Space, Toulouse, France, bEuropean Space Agency (ESA/ESTEC), Noordwijk, The Netherlands, cTRAD, Tests and Radiation, Toulouse, France)
09:30 D1b-2 #148Evaluation of thermal balancing techniques in InGaP/GaAs HBT power arrays for wireless handset power amplifiers
A.G. Metzgera, V. D’alessandrob, N. Rinaldib, P.J. Zampardia
(aSkyworks Solutions Inc., Newbury Park, CA 91320, USA, bDepartment of Electrical Engineering and Information Technology, University Federico II, Naples, Italy)
09:50 D1b-3 #178Comparison of the performances of an InAlN/GaN HEMT with a Mo/Au gate or a Ni/Pt/Au gate
I. Rossettoa, F. Rampazzoa, R. Silvestria, A. Zanandreaa, C. Duab, S. Delageb, M. Ouallib, M. Meneghinia, E. Zanonia, G. Meneghessoa
(aUniversity of Padova, Department of Information Engineering, via Gradenigo 6/b, 35131 Padova, Italy, bTHALES 3-5 Lab., Route de Nozay, 91461 Marcoussis cedex, France)
10:10 D1b-4 #173Thermal instability during short circuit of normally-off AlGaN/GaN HFETs
C. Abbate, F. Iannuzzo, G. Busatto
(Department of Electric and Information Engineering (DIEI), University of Cassino and Southern Lazio, Via G. Di Biasio, 43, 03043 Cassino, FR, Italy)
10:30Coffee Break
Session E2bMEMS reliability
 Auditorium
chairpersonsI. De Wolf - IMEC (Belgium)
G. Papaioannou - University of Athens (Greece)
10:50 E2b-1 #200Effect of moisture swelling on MEMS packaging and integrated sensors
J. Kellera, R. Mrosskoa,b, H. Dobrinskic, J. Stürmannc, R. Döringb, R. Dudekb, S. Rzepkab, B. Michelb
(aAMIC Angewandte Micro-Messtechnik GmbH, Volmerstrasse 9B, 12489 Berlin, Germany, bMicro Materials Center at Fraunhofer ENAS, Chemnitz, Germany, cHella Fahrzeugkomponenten GmbH, Bremen, Germany)
11:10 E2b-2 #130Properties of contactless and contacted charging in MEMS capacitive switches
M. Koutsourelia, L. Michalasa, P. Martinsb, E. Papandreoua, A. Leulietb, S. Bansropunb, G. Papaioannoua, A. Ziaeib
(aSolid State Section, Physics Department, University of Athens, Athens 15784, Greece, bThales Research & Technology, F91767 Palaiseau Cedex, France)
11:30 E2b-3 #5Failure analysis and detection methodology for capacitive RF-MEMS switches based on BEOL BiCMOS process
N. Torres Mataboscha,b, F. Coccettia,c,d, M. Kaynake, B. Espanaf, B. Tillacke,g, J.L. Cazauxf
(aCNRS, LAAS, 7 Avenue du colonel Roche, F-31400 Toulouse, France, bUniv de Toulouse, UPS, LAAS, F-31400 Toulouse, France, cUniv de Toulouse, LAAS, F-31400 Toulouse, France, dFIALAB, 425 rue Jean Rostand, 31670 Labege France, eIHP, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany, fThales Alenia Space, 26 Avenue Jean-Francois Champollion, 31037 Toulouse, France, gTechnische Universitat Berlin, HFT4, Einsteinufer 25, 10587 Berlin, Germany)
11:50 E2b-4 #95A novel method to measure the internal pressure of MEMS thin-film packages
B. Wanga,b, J. De Costera, M. Weversb, I. De Wolfa,b
(aimec, Kapeldreef 75, Heverlee 3001, Belgium, bDept. Metallurgy and Materials Engineering, K.U.Leuven, Kasteelpark Arenberg 44, Heverlee 3001, Belgium)
Session D2bFailures mechanisms in Photonic Devices
 Room 2.1-2.4
chairpersonsL. Bechou - IMS, University of Bordeaux (France)
M. Vanzi - University of Cagliari (Italy)
10:50 D2b-1 #185Durability study of a fluorescent optical memory in glass studied by luminescence spectroscopy
A. Royona,b, K. Bourhisc, L. Béchoua, T. Cardinalc, L. Canionia, Y. Deshayesb
(aLaboratoire Ondes et Matière d’Aquitaine, Université de Bordeaux, 351 Cours de la Libération, 33405 Talence cedex, France, bLaboratoire IMS, Université de Bordeaux, 351 Cours de la Libération, 33405 Talence cedex, France, cInstitut de Chimie et de la Matière Condensée de Bordeaux, CNRS, Université de Bordeaux, 87 Avenue du Docteur Schweitzer, 33608 Pessac cedex, France)
11:10 D2b-2 #87Conclusion of the accelerated stress conditions affecting phosphor-converted LEDs using the fractional factorial design method
Y.G. Yoona, J.H. Kangb, I.H. Janga, S.I. Chanc, J.S. Jangb
(aResearch & Development Center, Korea Testing Certification, Gunpo, Republic of Korea, bDepartment of Industrial Engineering, Graduate School of Ajou University, Suwon, Republic of Korea, cReliability Physics Research Center, Korea Electronic Technology, Seongnam, Republic of Korea)
11:30 D2b-3 #169“Hot-plugging” of LED modules: Electrical characterization and device degradation
M. Dal Lagoa, M. Meneghinia,b, N. Trivellina,b, G. Murac, M. Vanzic, G. Meneghessoa,b, E. Zanonia,b
(aUniversity of Padova, Department of Information Engineering, via Gradenigo 6/B, 35131 Padova, Italy, bLightCube SRL, via della Navigazione Interna 51, 35129 Padova, Italy, cUniversity of Cagliari, Department of Electrical and Electronic Engineering, Cagliari, Italy)
11:50 D2b-4 #190Optical losses in single-mode laser diodes
M. Vanzia, G. Muraa, M. Marongiua,b, T. Tomasib
(aUniversity of Cagliari – DIEE, Piazza D’Armi, 09123 Cagliari, Italy, bHuawei Technologies Italy, Milano, Italy)
12:10Announcement of ESREF 2013 Best Paper Awards Conference closing
 

Poster Papers

AP-1 #6Access resistor modelling for EEPROM’s retention test vehicle
P. Caneta, J. Postel-Pellerina, J.L. Ogierb
(aAix Marseille Université, CNRS, IM2NP UMR 7334, Polytech’Marseille – IMT – Technopôle Château Gombert, 38 Rue Joliot Curie, 13451 Marseille Cedex 20, France, bSTMicroelectronics, ZI de Rousset, BP 2, 13106 Rousset Cedex, France)
AP-2 #29A low-cost built-in error correction circuit design for STT-MRAM reliability improvement
W. Kanga,c, W. Zhaoa,b, Z. Wanga,b, Y. Zhanga,b, J.-O. Kleina,b, Y. Zhangc, C. Chapperta,b, D. Ravelosonaa,b
(aIEF, Univ. Paris-Sud 11, Orsay 91405, France, bUMR8622, CNRS, Orsay 91405, France, cElectrical Engineering Department, Beihang University, Beijing 100191, China)
AP-3 #72SNaP: A novel hybrid method for circuit reliability assessment under multiple faults
S.N. Pagliarini, A. Ben Dhia, L.A. D. B. Naviner, J.-F. Naviner
(Télécom ParisTech, Institute MINES-TELECOM, LTCI-CNRS COMELEC Department, 46, Rue Barrault, 75013 Paris, France)
AP-4 #138Reliability improvement of automotive electronics based on environmental stress screen methodology
S.I. Chana, J.H. Kangb, J.S. Jangb
(aReliability Physics Research Center, Korea Electronic Technology Institute, Seongnam, Republic of Korea, bDepartment of Industrial Engineering, Graduate School of Ajou University, Suwon, Republic of Korea)
BP-1 #13Impact of back gate biases on hot carrier effects in multiple gate junctionless transistors
S. M. Lee, H. J. Jang, J. T. Park
(Department of Electronics Engineering, University of Incheon, #119 Academi-Ro Yoonsu-Gu, Incheon 406-772, Republic of Korea)
BP-2 #24Methodology for improvement of data retention in floating gate flash memory using leakage current estimation
P. Moona, J. Y. Lima, T.-U. Younb, K.-W. Nohb, S.-K. Parkb, I. Yuna
(aSchool of Electrical and Electronic Engineering, Yonsei University, Seoul, Republic of Korea, bResearch and Development Division, SK Hynix Semiconductor Inc., Icheon, Republic of Korea)
BP-3 #67Influence of copper on the diffusion length of the minority carriers in devices based on n-type Si/SiO2
V. Kolkovsky, K. Lukat
(IPMS Fraunhofer, Dresden Maria-Reiche Str. 2, 01109 Dresden, Germany)
BP-4 #89Field-effect control of breakdown paths in HfO2 based MIM structures
X. Sauraa, X. Liana, D. Jiméneza, E. Mirandaa, X. Borriséb,c, F. Campabadalb, J. Suñéa
(aDepartament d’Enginyeria Electrònica, Universitat Autònoma de Barcelona, Spain, bInstitut de Microelectrònica de Barcelona (IMB-CNM), CSIC, Bellaterra, Spain, cInstitut Català de Nanotecnologia, Bellaterra, Spain)
BP-5 #107Effect of negative bias temperature instability induced by a low stress voltage on nanoscale high-k/metal gate pMOSFETs
S. Lee, C. Kim, H. Kim, G.-J. Kim, J.-H. Seo, D. Son, B. Kang
(Department of Electrical Engineering, Pohang University of Science and Technology, Pohang, Gyeongbuk 790-784, Republic of Korea)
BP-6 #133BTI, HCI and TDDB aging impact in flip–flops
C. Nunesa, P. F. Butzenb, A. I. Reisa, R. P. Ribasa
(aPGMicro, Federal University of Rio Grande do Sul, Porto Alegre, Brazil, bCenter for Computational Science, Federal University of Rio Grande, Rio Grande, Brazil)
BP-7 #150BTI and HCI first-order aging estimation for early use in standard cell technology mapping
P.F. Butzena, V. Dal Bemb, A.I. Reisb, R.P. Ribasb
(aCenter for Computational Science, Federal University of Rio Grande, Rio Grande, Brazil, bInstitute of Informatics, Federal University of Rio Grande do Sul, Porto Alegre, Brazil)
BP-9 #115Dynamic simulation of migration induced failure mechanism in integrated circuit interconnects
A. Moujbania, J. Kludta, K. Weide-Zaagea, M. Ackermannb, V. Heinb, L. Meinshausena
(aInformation Technology Laboratory LFI, Leibniz Universität Hannover, Schneiderberg 32, 30167 Hannover, Germany, bX-FAB Semiconductor Foundries AG, Haarbergstrasse 67, 99097 Erfurt, Germany)
BP-10 #124Transient device simulation of neutron-induced failure in IGBT: A first step for developing a compact predictive model
K. Guetarni, A.D. Touboul, J. Boch, L. Foro, A. Privat, A. Michez, J.R. Vaillé, F. Saigné
(UM2, Université Montpellier 2, IES – UMR UM2/CNRS 5214, F-34095 Montpellier Cedex 5, France)
CP-1 #25Micro-sectioning approach for quality and reliability assessment of wire bonding interfaces in IGBT modules
K. B. Pedersen, P. K. Kristensen, V. Popok, K. Pedersen
(Department of Physics and Nanotechnology, Aalborg University, Skjernvej 4A, 9220 Aalborg Øst, Denmark)
CP-2 #41Combined Thermal and Emission Imaging for Identifying the Signature of Defects with High Resolution and Transient Behaviour
 Kazuaki Yazawaa,   Dustin Kendiga,   Diana Davila b,   Ali Shakouric
(aMicrosanj LLC - USA , b The National Microelectronics Center - Spain , c Purdue University - USA)
CP-3 #132Repairing bonding wire connections using a microsoldering unit inside an SEM
A. Rummel, K. Schock, M. Kemmler, A. Smith, S. Kleindiek
(Kleindiek Nanotechnik GmbH, Aspenhaustr. 25, 72770 Reutlingen, Germany)
CP-4 #140Scanning probe microscopy based electrical characterization of thin dielectric and organic semiconductor films
A. Hofera, R. Bibergera, G. Benstettera, B. Wilkeb, H. Göbelb
(aUniversity of Applied Sciences Deggendorf, Edlmairstr. 6+8, 94469 Deggendorf, Germany, bHelmut-Schmidt-University, University of the Federal Armed Forces Hamburg, Holstenhofweg 85, 22043 Hamburg, Germany)
CP-5 #191Contoured device sample preparation technique for ±5μm remaining silicon thicknesses that meets solid immersion lens requirements
C. Richardson, G. Liechty, C. Smith, M. Karow
(Allied High Tech Products, Rancho Dominguez, CA 90220, USA)
DP-1 #135Temperature-dependent reverse-bias stress of normally-off GaN power FETs
F. Giuliania, N. Delmontea,b, P. Covaa,b, R. Menozzia
(aDepartment of Information Engineering, University of Parma, Viale G.P. Usberti, 181/a, 43124 Parma, Italy, bINFN Pavia, via Agostino Bassi, 6, 27100 Pavia, Italy)
DP-2 #167Influence of gate leakage current on AlGaN/GaN HEMTs evidenced by low frequency noise and pulsed electrical measurements
S. Karboyana, J.G. Tartarina, M. Rzinb, L. Brunelb,d, A. Curutchetb, N. Malbertb, N. Labatb, D. Carisettic, B. Lambertd, M. Mermouxe, E. Romain-Latuf, F. Thomasf, C. Bouexièreg, C. Moreaug
(aLAAS-CNRS, University of Toulouse, 7 Avenue du Colonel Roche, 31031 Toulouse, France, bIMS, CNRS UMR 5218, University of Bordeaux, 351 Cours de la Libération, 33405 Talence, France, cThales Research and Technology, 1 Avenue Augustin Fresnel, 91767 Palaiseau, France, dUnited Monolithic Semiconductor, 10 Avenue du Québec, 91140 Villebon sur Yvette, France, eLEPMI, UMR 5279 CNRS, 1130 rue de la Piscine, 38402 Saint-Martin d’Heres, France, fSERMA Technologies, 7 Parvis Louis Néel Minatec – BHT, 38040 Grenoble, France, gDélégation Générale de l ‘Armement, La Roche Marguerite, 35998 Rennes, France)
DP-3 #177Variations in junction capacitance and doping activation associated with electrical stress of InGaN/GaN laser diodes
C. De Santi, M. Meneghini, S. Carraro, S. Vaccari, N. Trivellin, S. Marconi, M. Marioli, G. Meneghesso, E. Zanoni
(Department of Information Engineering, University of Padova, Padua, Italy)
DP-4 #189The role of the optical trans-characteristics in laser diode analysis
G. Muraa, M. Vanzia, G. Marcellob, R. Caoc
(aUniversity of Cagliari – DIEE, Piazza d’Armi, 09123 Cagliari, Italy, bElectronic Engineering Student, University of Cagliari, Italy, cHuawei Technologies, Co., Ltd, Shenzhen, China)
E1P-1 #42Solder joint reliability under realistic service conditions
P. Borgesena, S. Hamashaa, M. Obaidata, V. Raghavana, X. Daia, M. Meilunasb, M. Anselmb
(aDepartment of Systems Science & Industrial Engineering, Binghamton University, Binghamton, NY 13902, USA, bUniversal Instruments Corporation, Conklin, NY 13748, USA)
E1P-2 #51Migration issues in sintered-silver die attaches operating at high temperature
R. Riva, C. Buttay, B. Allard, P. Bevilacqua
(Universite de Lyon, CNRS, INSA-Lyon, Laboratoire Ampère, UMR 5005, F-69621 Villeurbanne, France)
E1P-3 #59Conductive adhesive joint for extreme temperature applications
J.B. Jullien, H. Frémont, J.Y. Deletage
(IMS Laboratory, Bordeaux I University – UMR 5218, 351 Cours de la Libération, 33405 Talence, France)
E1P-4 #78Stress evolution in the metal layers of TSVs with Bosch scallops
A.P. Singulania,b, H. Cerica,b, S. Selberherra
(aInstitute for Microelectronics, TU Wien, Gußhausstraße 27–29, Vienna, Austria, bChristian Doppler Laboratory for Reliability Issues in Microelectronics at Institute for Microelectronics, Gußhausstraße 27–29, Vienna, Austria)
E1P-5 #97Dynamic simulation of octahedron slotted metal structures
J. Kludta, K. Weide-Zaagea, M. Ackermannb, V. Heinb
(aInformation Technology Laboratory, Leibniz Universität Hannover, Schneiderberg 32, 30167 Hannover, Germany, bX-FAB Semiconductor Foundries AG, Haarbergstraße 67, 99097 Erfurt, Germany)
E1P-6 #134Finite element modeling and characterization of lead-free solder joints fatigue life during power cycling of surface mounting power devices
N. Delmontea,b, F. Giuliania, P. Covaa,b
(aDipartimento di Ingegneria dell’Informazione, University of Parma, viale G.P. Usberti 181/A, 43124 Parma, Italy, bINFN Pavia, via Agostino Bassi, 6, 27100 Pavia, Italy)
E1P-7 #161Study of die attach technologies for high temperature power electronics: Silver sintering and gold–germanium alloy
W. Sabbaha,b,c, S. Azzopardia, C. Buttayc, R. Meuretb, E. Woirgarda
(aUniversity of Bordeaux, Laboratoire IMS, UMR 5218, F-33400 Talence, France, bHispano-Suiza, Safran Group, Réau, France, cUniversity of Lyon, CNRS, INSA-Lyon, Laboratoire Ampère, UMR 5005, F-69621, France)
E2P-1 #52Improved bending fatigue life of single crystal silicon micro-beam by phosphorus doping
J.-Y. Taoa, X.-J. Wanga, B. Liua, Y.-L. Wangb, Z.-Q. Rena, X. Chena
(aScience and Technology on Integrated Logistics Support Laboratory, National University of Defense Technology, Changsha, Hunan 410073, PR China, bNaval Support Research Center, Beijing 100000, PR China)
E2P-2 #125The effect of water on the mechanical properties of native oxide coated silicon structure in MEMS
Y.-A. Zhanga, J.-Y. Taoa, Y.-L. Wangb, Z.-Q. Rena, B. Liua, X. Chena
(aScience and Technology on Integrated Logistics Support Laboratory, National University of Defense Technology, Changsha, Hunan 410073, PR China, bNaval Support Research Center, Beijing 100000, PR China)
E2P-3 #109Field failure mechanism and reproduction due to moisture for low-voltage ZnO varistors
J.-S. Jeong
(Components and Materials Physics Research Center, Korea Electronics Technology Institute (KETI), 68, Yatap-Dong, Bundang-Gu, Seongnam-City, Gyeonggi-Do, Republic of Korea)
E2P-3 #162Analysis of ultracapacitors ageing in automotive application
M. Catelania, L. Ciania, M. Marraccib, B. Tellinib
(aDepartment of Information Engineering, University of Florence, Via S. Marta 3, 50139 Florence, Italy, bDepartment DESTEC, University of Pisa, L.go L. Lazzarino, 56122 Pisa (PI), Italy)
FP-1 #20High temperature gate-bias and reverse-bias tests on SiC MOSFETs
L. Yang, A. Castellazzi
(Department of Electrical and Electronic Engineering, University of Nottingham, University Park, Nottingham, NG7 2RD, UK)
FP-2 #50Extending the lifetime of power electronic assemblies by increased cooling temperatures
A. Hutzler, A. Tokarski, A. Schletz
(Fraunhofer IISB, Landgrabenstr. 94, 90443 Nuremberg, Germany)
FP-3 #74Design issues of a thin-film p-channel SOI power MOSFET for high-temperature applications
M. Yoshimura, A. Uchida, S. Matsumoto
(Kyushu Institute of Technology, 1-1, Sensui-cho, Tobata-ku, Kitakyushu-shi, Fukuoka 804-8550, Japan)
FP-4 #79Physically based analytical model of the blocking IV curve of Trench IGBTs
L. Maresca, G. Romano, G. Breglio, A. Irace
(Department of Electrical Engineering and Information Technologies, Via Claudio 21, 80125 Naples, Italy)
FP-5 #98Overview of catastrophic failures of freewheeling diodes in power electronic circuits
R. Wu, F. Blaabjerg, H. Wang, M. Liserre
(Centre of Reliable Power Electronics (CORPE), Department of Energy Technology, Aalborg University, Pontoppidanstraede 101, 9220 Aalborg, Denmark)
FP-6 #139Conducted and radiated EMI evolution of power RF N-LDMOS after accelerated ageing tests
M. Tlig, J. Ben Hadj Slama, M.A. Belaid
(SAGE-ENISo, National Engineering School of Sousse, University of Sousse, 4023 Sousse, Tunisia)
GP-1 #14A comparative study on device degradation under a positive gate stress and hot carrier stress in InGaZnO thin film transistors
H. J. Jang, S. M. Lee, C. G. Yu, J. T. Park
(Department of Electronics Engineering, University of Incheon, #119 Academi-Ro Yoonsu-Gu, Incheon 406-772, Republic of Korea)
GP-2 #66The effect of encapsulant discoloration and delamination on the electrical characteristics of photovoltaic module
N.C. Parka,b, J.S. Jeonga, B.J. Kangb, D.H. Kimb
(aComponents & Materials Physics Research Center, Korea Electronic Technology Institute, #68 Yaptap-dong, Bundang-gu, Seongnam-si, Gyeonggi-do 463-816, Republic of Korea, bDepartment of Materials Science and Engineering, Korea University, Anam-dong, Seongbuk-gu, Seoul 136-701, Republic of Korea)
GP-3 #153The effect of moisture on the degradation mechanism of multi-crystalline silicon photovoltaic module
T.H. Kima,c, N.C. Parka, D.H. Kimb
(aComponents & Materials Physics Research Center, Korea Electronic Technology Institute, #68 Yaptap-dong, Bundang-gu, Seongnam-si, Gyeonggi-do 463-816, Republic of Korea, bDepartment of Materials Science and Engineering, Korea University, Anam-dong, Seongbuk-gu, Seoul 136-701, Republic of Korea, cSchool of Information & Communication Engineering, Sungkyunkwan University, 300 Chunchun-dong, Jangan-ku, Suwon, Kyunggi-do 440-746, Republic of Korea)